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Designs (49)

49 Results - Page 2/5 1 2 3 4 5
Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9014: 4A, 0 ~ 200V, Half H-Bridge Manufacturer: EPC

The EPC9014 development board is a 200 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring the EPC2019

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9018: 35A, 0 ~ 30V, H-Bridge Manufacturer: EPC

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs).

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9062: 48A, 0 ~ 100V, Half H-Bridge Manufacturer: EPC

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2030/31/32 eGaN® field effect transistors (FETs).

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9005C: 7A, 0 ~ 40V, Half H-Bridge Driver Manufacturer: EPC

The EPC9005C development board is a 40 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9052: 1A, 0 ~ 40V, 15 MHz, Class E Amplifier Manufacturer: EPC

The EPC9052 is a high efficiency, differential mode Class-E amplifier development board that can operate up to 15MHz.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9039: 17A Half H-bridge, 0 ~ 80V Manufacturer: EPC

The purpose of these development boards is to simplify the evaluation process of these monolithically integrated eGaN FETs

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9057: 6A, 0 ~ 80V, Half-bridge Manufacturer: EPC

The EPC9057 development board is a 80 V maximum device voltage, 6 A maximum output current, half bridge with onboard gate drives, featuring the EPC2039 (EPC2214 is the recommended replacement, 10A) enhancement mode (eGaN®) FET.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9091: 5A, 0 ~ 100V Half H-Bridge, eGaN Manufacturer: EPC

The EPC9091 development board is a 100 V maximum device voltage, 5 A output current, half bridge with onboard gate drives, featuring the EPC2051 enhancement mode (eGaN) field effect transistor (FET).

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9126: 75A, 0 ~ 80V, Pulsed Laser Diode Driver Manufacturer: EPC

The EPC9126 development board is primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak). The board is shipped with an EPC2016C 100V maximum device voltage capable of current pulses up to 75 A.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9058: 2A, 0 ~ 52V, 15MHz, Class E Amplifier Manufacturer: EPC

The EPC9058 is a high efficiency, differential mode Class-E amplifier development board that can operate up to 15 MHz, including 6.78 MHz which is popular for wireless power. However, this board is not preconfigured for any particular frequency. The purpose of this development board is to simplify the evaluation process of class-E amplifier technology using eGaN FETs by allowing engineers to easily mount all the critical class-E components on a single board.

49 Results - Page 2/5 1 2 3 4 5