The EVALMASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The LMG1210EVM-012 is a small, easy-to-use power stage with an external PWM signal (or HI and LI). The board can be configured as a buck converter, boost converter or other converter topology using a half bridge.

The TIDA-01634 reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power HEMTs. With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth.

The EPC9048C is a half bridge development board with onboard gate driver, featuring the 200V, 15A rated EPC2034C GaN field effect transistor (FET).

The TDHBG1200DC100 1.2 kW half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with GaN FETs.

This development board is in a half bridge topology with onboard gate drives, featuring theEPC2035/36 eGaN® field effect transistors

The EPC9051 is a high efficiency, differential mode class-E amplifier demonstration board that can operate up to 15 MHz. This board may also be used for applications where a low side switch is utilized. Examples include, and are not limited to, push-pull converters, current-mode Class D amplifiers, common source bi-directional switch, and generic high voltage narrow pulse width applications such as LiDAR.

This development board is in a half bridge topology with onboard gate drives, featuring the EPC2035/36 eGaN® field effect transistors

The EPC9057 development board is a 80 V maximum device voltage, 6 A maximum output current, half bridge with onboard gate drives, featuring the EPC2039 (EPC2214 is the recommended replacement, 10A) enhancement mode (eGaN®) FET.

The EPC9058 is a high efficiency, differential mode Class-E amplifier development board that can operate up to 15 MHz, including 6.78 MHz which is popular for wireless power. However, this board is not preconfigured for any particular frequency. The purpose of this development board is to simplify the evaluation process of class-E amplifier technology using eGaN FETs by allowing engineers to easily mount all the critical class-E components on a single board.