Name: SQS407ENW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS407ENW-T1_GE3TR-ND
Price: 2553 KRW
Availability: InStock

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SQS407ENW-T1_GE3
DigiKey Part Number	SQS407ENW-T1_GE3TR-ND - Tape & Reel (TR) SQS407ENW-T1_GE3CT-ND - Cut Tape (CT) SQS407ENW-T1_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQS407ENW-T1_GE3
Description	MOSFET P-CH 30V 16A PPAK1212-8W
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	P-Channel 30 V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8W
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Mfr Vishay Siliconix	Vgs (Max) ±20V
Series TrenchFET®	Input Capacitance (Ciss) (Max) @ Vds 4572 pF @ 20 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 62.5W (Tc)
Part Status Active	Operating Temperature -55°C ~ 175°C (TJ)
FET Type P-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 30 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 16A (Tc)	Supplier Device Package PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case PowerPAK® 1212-8W
Rds On (Max) @ Id, Vgs 10.8mOhm @ 12A, 10V	Base Product Number SQS407
Vgs(th) (Max) @ Id 2.5V @ 250µA