Name: SQM120N10-3M8_GE3
Brand: Vishay Siliconix
SKU: SQM120N10-3M8_GE3TR-ND
Price: 7827 KRW
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SQM120N10-3M8_GE3
DigiKey Part Number	SQM120N10-3M8_GE3TR-ND - Tape & Reel (TR) SQM120N10-3M8_GE3CT-ND - Cut Tape (CT) SQM120N10-3M8_GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SQM120N10-3M8_GE3
Description	MOSFET N-CH 100V 120A TO263
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet
EDA/CAD Models	SQM120N10-3M8_GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Mfr Vishay Siliconix	Vgs (Max) ±20V
Series TrenchFET®	Input Capacitance (Ciss) (Max) @ Vds 7230 pF @ 25 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 375W (Tc)
Part Status Active	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 100 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 120A (Tc)	Supplier Device Package TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V	Base Product Number SQM120
Vgs(th) (Max) @ Id 3.5V @ 250µA