N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-220AB
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SIHP35N60EF-GE3

DigiKey Part Number
SIHP35N60EF-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP35N60EF-GE3
Description
MOSFET N-CH 600V 32A TO220AB
Manufacturer Standard Lead Time
26 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
134 nC @ 10 V
Series
Vgs (Max)
±30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
2568 pF @ 100 V
Part Status
Active
Power Dissipation (Max)
250W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
TO-220AB
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
97mOhm @ 17A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 162
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All prices are in KRW
Tube
QuantityUnit PriceExt Price
1₩11,313.00000₩11,313
50₩6,059.86000₩302,993
100₩5,552.45000₩555,245
500₩4,664.30800₩2,332,154
1,000₩4,379.26300₩4,379,263
2,000₩4,322.68200₩8,645,364
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.