Name: SIHP21N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHP21N80AE-GE3-ND
Price: 8026 KRW
Availability: OutOfStock

SIHP21N80AE-GE3 is out of stock and can be placed on backorder.

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SIHP21N80AE-GE3
DigiKey Part Number	SIHP21N80AE-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHP21N80AE-GE3
Description	MOSFET N-CH 800V 17.4A TO220AB
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 17.4A (Tc) 32W (Tc) Through Hole TO-220AB
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Series E	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1388 pF @ 100 V
Part Status Active	Power Dissipation (Max) 32W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 800 V	Supplier Device Package TO-220AB
Current - Continuous Drain (Id) @ 25°C 17.4A (Tc)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHP21
Rds On (Max) @ Id, Vgs 235mOhm @ 11A, 10V

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Substitutes (4)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
FCP260N60E	onsemi	190	FCP260N60EOS-ND	₩6,207.00000	Similar
FCP290N80	onsemi	0	FCP290N80OS-ND	₩0.00000	Similar
TK16E60W5,S1VX	Toshiba Semiconductor and Storage	0	TK16E60W5S1VX-ND	₩7,889.00000	Similar
TK17E80W,S1X	Toshiba Semiconductor and Storage	92	TK17E80WS1X-ND	₩10,518.00000	Similar