N-Channel 600 V 30A (Tc) 208W (Tc) Through Hole TO-220AB
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SIHP100N60E-GE3

DigiKey Part Number
SIHP100N60E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP100N60E-GE3
Description
MOSFET N-CH 600V 30A TO220AB
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 30A (Tc) 208W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1851 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
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QuantityUnit PriceExt Price
1₩8,332.00000₩8,332
50₩4,331.70000₩216,585
100₩3,945.53000₩394,553
500₩3,269.21600₩1,634,608
1,000₩3,052.06600₩3,052,066
2,000₩2,869.59600₩5,739,192
5,000₩2,866.50000₩14,332,500
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.