SIHG22N60AEL-GE3 is Obsolete and no longer manufactured.
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Datasheet
N-Channel 600 V 21A (Tc) 208W (Tc) Through Hole TO-247AC
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHG22N60AEL-GE3

DigiKey Part Number
SIHG22N60AEL-GE3-ND
Manufacturer
Manufacturer Product Number
SIHG22N60AEL-GE3
Description
MOSFET N-CH 600V 21A TO247AC
Customer Reference
Detailed Description
N-Channel 600 V 21A (Tc) 208W (Tc) Through Hole TO-247AC
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Series
Vgs (Max)
±30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
1757 pF @ 100 V
Part Status
Obsolete
Power Dissipation (Max)
208W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
TO-247AC
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (4)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
FCH150N65F-F155onsemi262FCH150N65F-F155-ND₩12,582.00000Similar
FCH165N60Eonsemi93FCH165N60EOS-ND₩11,145.00000Similar
STW24N60DM2STMicroelectronics678497-14582-5-ND₩7,155.00000Similar
TK16N60W,S1VFToshiba Semiconductor and Storage20TK16N60WS1VF-ND₩9,830.00000Similar
Obsolete
This product is no longer manufactured. View Substitutes