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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIHD2N80AE-GE3 | |
|---|---|
DigiKey Part Number | 742-SIHD2N80AE-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHD2N80AE-GE3 |
Description | MOSFET N-CH 800V 2.9A DPAK |
Manufacturer Standard Lead Time | 24 Weeks |
Customer Reference | |
Detailed Description | N-Channel 800 V 2.9A (Tc) 62.5W (Tc) Surface Mount TO-252AA |
Datasheet | Datasheet |
Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 800 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2.9Ohm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 62.5W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-252AA | |
Package / Case | ||
Base Product Number |
In-Stock: 1,559
Check for Additional Incoming Stock
Quantity
All prices are in KRW
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ₩2,874.00000 | ₩2,874 |
| 10 | ₩1,828.40000 | ₩18,284 |
| 100 | ₩1,226.56000 | ₩122,656 |
| 500 | ₩968.55600 | ₩484,278 |
| 1,000 | ₩885.54200 | ₩885,542 |
| 3,000 | ₩780.16200 | ₩2,340,486 |
| 6,000 | ₩727.13033 | ₩4,362,782 |
| 12,000 | ₩682.56842 | ₩8,190,821 |
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