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SIHB33N60E-GE3 is out of stock and can be placed on backorder.
Available Substitutes:
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SIHB33N60E-GE3 | |
|---|---|
DigiKey Part Number | SIHB33N60E-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHB33N60E-GE3 |
Description | MOSFET N-CH 600V 33A D2PAK |
Manufacturer Standard Lead Time | 24 Weeks |
Customer Reference | |
Detailed Description | N-Channel 600 V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D2PAK) |
Datasheet | Datasheet |
Product Attributes
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Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V |
Packaging Tube | Vgs (Max) ±30V |
Part Status Active | Input Capacitance (Ciss) (Max) @ Vds 3508 pF @ 100 V |
FET Type | Power Dissipation (Max) 278W (Tc) |
Technology | Operating Temperature -55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) 600 V | Mounting Type Surface Mount |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package TO-263 (D2PAK) |
Drive Voltage (Max Rds On, Min Rds On) 10V | Package / Case |
Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V | Base Product Number |
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Substitutes (11)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IPB60R099C6ATMA1 | Infineon Technologies | 3,340 | IPB60R099C6ATMA1CT-ND | ₩10,457.00000 | Similar |
| IPB60R099CPAATMA1 | Infineon Technologies | 129 | 448-IPB60R099CPAATMA1CT-ND | ₩12,964.00000 | Similar |
| IPB60R099CPATMA1 | Infineon Technologies | 3,519 | IPB60R099CPATMA1CT-ND | ₩12,032.00000 | Similar |
| IPB60R125C6ATMA1 | Infineon Technologies | 2,682 | IPB60R125C6ATMA1CT-ND | ₩8,760.00000 | Similar |
| IPB60R125CPATMA1 | Infineon Technologies | 1,263 | IPB60R125CPATMA1CT-ND | ₩9,081.00000 | Similar |
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In-Stock: 0
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Quantity
All prices are in KRW
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ₩11,160.00000 | ₩11,160 |
| 10 | ₩7,524.80000 | ₩75,248 |
| 100 | ₩5,466.07000 | ₩546,607 |
| 500 | ₩4,588.84600 | ₩2,294,423 |
| 1,000 | ₩4,307.31800 | ₩4,307,318 |
| 2,000 | ₩4,242.42000 | ₩8,484,840 |
