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SIHB30N60E-E3 is Obsolete and no longer manufactured.
Available Substitutes:
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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIHB30N60E-E3 | |
|---|---|
DigiKey Part Number | SIHB30N60E-E3-ND - Tape & Reel (TR) |
Manufacturer | |
Manufacturer Product Number | SIHB30N60E-E3 |
Description | MOSFET N-CH 600V 29A D2PAK |
Customer Reference | |
Detailed Description | N-Channel 600 V 29A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK) |
Datasheet | Datasheet |
EDA/CAD Models | SIHB30N60E-E3 Models |
Product Attributes
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Category | Vgs(th) (Max) @ Id 4V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V |
Packaging Tape & Reel (TR) | Vgs (Max) ±30V |
Part Status Obsolete | Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V |
FET Type | Power Dissipation (Max) 250W (Tc) |
Technology | Operating Temperature -55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) 600 V | Mounting Type Surface Mount |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package TO-263 (D2PAK) |
Drive Voltage (Max Rds On, Min Rds On) 10V | Package / Case |
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V | Base Product Number |
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Substitutes (14)
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| IPB60R099C6ATMA1 | Infineon Technologies | 3,340 | IPB60R099C6ATMA1CT-ND | ₩10,457.00000 | Similar |
| IPB60R099CPAATMA1 | Infineon Technologies | 129 | 448-IPB60R099CPAATMA1CT-ND | ₩12,964.00000 | Similar |
| IPB60R099CPATMA1 | Infineon Technologies | 3,519 | IPB60R099CPATMA1CT-ND | ₩12,032.00000 | Similar |
| IPB60R099P7ATMA1 | Infineon Technologies | 1,990 | IPB60R099P7ATMA1CT-ND | ₩7,308.00000 | Similar |
| IPB60R125C6ATMA1 | Infineon Technologies | 2,682 | IPB60R125C6ATMA1CT-ND | ₩8,760.00000 | Similar |
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Obsolete
