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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIHB24N80AE-GE3 | |
|---|---|
DigiKey Part Number | 742-SIHB24N80AE-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHB24N80AE-GE3 |
Description | MOSFET N-CH 800V 21A D2PAK |
Manufacturer Standard Lead Time | 24 Weeks |
Customer Reference | |
Detailed Description | N-Channel 800 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK) |
Datasheet | Datasheet |
Product Attributes
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Category | Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V |
Mfr | Vgs (Max) ±30V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 1836 pF @ 100 V |
Part Status Active | Power Dissipation (Max) 208W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Surface Mount |
Drain to Source Voltage (Vdss) 800 V | Supplier Device Package TO-263 (D2PAK) |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Rds On (Max) @ Id, Vgs 184mOhm @ 10A, 10V | Base Product Number |
Vgs(th) (Max) @ Id 4V @ 250µA |
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In-Stock: 656
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Quantity
All prices are in KRW
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ₩7,063.00000 | ₩7,063 |
| 50 | ₩3,616.52000 | ₩180,826 |
| 100 | ₩3,283.71000 | ₩328,371 |
| 500 | ₩2,700.50200 | ₩1,350,251 |
| 1,000 | ₩2,513.22500 | ₩2,513,225 |
| 2,000 | ₩2,355.81200 | ₩4,711,624 |
| 5,000 | ₩2,293.20000 | ₩11,466,000 |
