Name: SIHB21N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHB21N60EF-GE3-ND
Price: 8347 KRW
Availability: InStock

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SIHB21N60EF-GE3
DigiKey Part Number	SIHB21N60EF-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB21N60EF-GE3
Description	MOSFET N-CH 600V 21A TO263AB
Manufacturer Standard Lead Time	28 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Packaging Tube	Vgs (Max) ±30V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 100 V
FET Type N-Channel	Power Dissipation (Max) 227W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 21A (Tc)	Supplier Device Package TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs 176mOhm @ 11A, 10V	Base Product Number SIHB21

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
IXFA22N65X2	IXYS	4,207	238-IXFA22N65X2-ND	₩7.04000	Similar
STB24NM60N	STMicroelectronics	688	497-11211-1-ND	₩7.64000	Similar

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SIHB21N60EF-GE3