


SIHB11N80AE-GE3 | |
|---|---|
DigiKey Part Number | 742-SIHB11N80AE-GE3-ND |
Manufacturer | |
Manufacturer Product Number | SIHB11N80AE-GE3 |
Description | MOSFET N-CH 800V 8A D2PAK |
Manufacturer Standard Lead Time | 25 Weeks |
Customer Reference | |
Detailed Description | N-Channel 800 V 8A (Tc) 78W (Tc) Surface Mount TO-263 (D2PAK) |
Datasheet | Datasheet |
EDA/CAD Models | SIHB11N80AE-GE3 Models |
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | ||
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 800 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 804 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 78W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-263 (D2PAK) | |
Package / Case | ||
Base Product Number |
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ₩4,346.00000 | ₩4,346 |
| 10 | ₩2,811.30000 | ₩28,113 |
| 100 | ₩1,939.47000 | ₩193,947 |
| 500 | ₩1,566.73000 | ₩783,365 |
| 1,000 | ₩1,446.98600 | ₩1,446,986 |
| 2,000 | ₩1,346.30650 | ₩2,692,613 |
| 5,000 | ₩1,311.51160 | ₩6,557,558 |



