Name: SI4686DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4686DY-T1-GE3TR-ND
Price: 3440 KRW
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI4686DY-T1-GE3
DigiKey Part Number	SI4686DY-T1-GE3TR-ND - Tape & Reel (TR) SI4686DY-T1-GE3CT-ND - Cut Tape (CT) SI4686DY-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI4686DY-T1-GE3
Description	MOSFET N-CH 30V 18.2A 8SO
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	N-Channel 30 V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surface Mount 8-SOIC
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Series TrenchFET®, WFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1220 pF @ 15 V
Part Status Active	Power Dissipation (Max) 3W (Ta), 5.2W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30 V	Supplier Device Package 8-SOIC
Current - Continuous Drain (Id) @ 25°C 18.2A (Tc)	Package / Case 8-SOIC (0.154", 3.90mm Width)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SI4686
Rds On (Max) @ Id, Vgs 9.5mOhm @ 13.8A, 10V