Name: SI4435DDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4435DDY-T1-GE3TR-ND
Price: 1850 KRW
Availability: InStock

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SI4435DDY-T1-GE3
DigiKey Part Number	SI4435DDY-T1-GE3TR-ND - Tape & Reel (TR) SI4435DDY-T1-GE3CT-ND - Cut Tape (CT) SI4435DDY-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI4435DDY-T1-GE3
Description	MOSFET P-CH 30V 11.4A 8SO
Manufacturer Standard Lead Time	28 Weeks
Customer Reference
Detailed Description	P-Channel 30 V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
Datasheet	Datasheet
EDA/CAD Models	SI4435DDY-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 15 V
Part Status Active	Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
FET Type P-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 30 V	Supplier Device Package 8-SOIC
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)	Package / Case 8-SOIC (0.154", 3.90mm Width)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SI4435
Rds On (Max) @ Id, Vgs 24mOhm @ 9.1A, 10V

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SI4435DDY-T1-GE3