Name: SI4190BDY-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SI4190BDY-T1-GE3TR-ND
Price: 4739 KRW
Availability: InStock

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SI4190BDY-T1-GE3
DigiKey Part Number	742-SI4190BDY-T1-GE3TR-ND - Tape & Reel (TR) 742-SI4190BDY-T1-GE3CT-ND - Cut Tape (CT) 742-SI4190BDY-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI4190BDY-T1-GE3
Description	N-CHANNEL 100 V (D-S) MOSFET SO-
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 12A (Ta), 17A (Tc) 3.8W (Ta), 8.4W (Tc) Surface Mount 8-SOIC
Datasheet	Datasheet
EDA/CAD Models	SI4190BDY-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 50 V
Part Status Active	Power Dissipation (Max) 3.8W (Ta), 8.4W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package 8-SOIC
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 17A (Tc)	Package / Case 8-SOIC (0.154", 3.90mm Width)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SI4190
Rds On (Max) @ Id, Vgs 9.3mOhm @ 10A, 10V