Name: SI2392BDS-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SI2392BDS-T1-GE3TR-ND
Price: 1468 KRW
Availability: InStock

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SI2392BDS-T1-GE3
DigiKey Part Number	742-SI2392BDS-T1-GE3TR-ND - Tape & Reel (TR) 742-SI2392BDS-T1-GE3CT-ND - Cut Tape (CT) 742-SI2392BDS-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2392BDS-T1-GE3
Description	N-CHANNEL 100-V (D-S) MOSFET SOT
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 2A (Ta), 2.3A (Tc) 1.25W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 7.1 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 50 V
Part Status Active	Power Dissipation (Max) 1.25W (Ta), 1.7W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C 2A (Ta), 2.3A (Tc)	Package / Case TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SI2392
Rds On (Max) @ Id, Vgs 52mOhm @ 10A, 10V

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SI2392BDS-T1-GE3