Name: SI2319DDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2319DDS-T1-GE3TR-ND
Price: 1391 KRW
Availability: InStock

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SI2319DDS-T1-GE3
DigiKey Part Number	SI2319DDS-T1-GE3TR-ND - Tape & Reel (TR) SI2319DDS-T1-GE3CT-ND - Cut Tape (CT) SI2319DDS-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2319DDS-T1-GE3
Description	MOSFET P-CH 40V 2.7A/3.6A SOT23
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	P-Channel 40 V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet
EDA/CAD Models	SI2319DDS-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Series TrenchFET® Gen III	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 20 V
Part Status Active	Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
FET Type P-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 40 V	Supplier Device Package SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 3.6A (Tc)	Package / Case TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SI2319
Rds On (Max) @ Id, Vgs 75mOhm @ 2.7A, 10V

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SI2319DDS-T1-GE3