Name: SI2301HDS-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SI2301HDS-T1-GE3TR-ND
Price: 612 KRW
Availability: InStock

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SI2301HDS-T1-GE3
DigiKey Part Number	742-SI2301HDS-T1-GE3TR-ND - Tape & Reel (TR) 742-SI2301HDS-T1-GE3CT-ND - Cut Tape (CT) 742-SI2301HDS-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2301HDS-T1-GE3
Description	P-CHANNEL 20-V (D-S) MOSFET
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 2.3A (Ta), 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 112mOhm @ 2.8A, 4.5V
Mfr Vishay Siliconix	Vgs(th) (Max) @ Id 1V @ 250µA
Series TrenchFET®	Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±8V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 10 V
FET Type P-Channel	Power Dissipation (Max) 860mW (Ta), 1.6W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 20 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta), 3.1A (Tc)	Supplier Device Package SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V	Package / Case TO-236-3, SC-59, SOT-23-3

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SI2301HDS-T1-GE3