Name: TW092V65C,LQ
Brand: Toshiba Semiconductor and Storage
SKU: 264-TW092V65CLQTR-ND
Price: 36706 KRW
Availability: InStock

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TW092V65C,LQ
DigiKey Part Number	264-TW092V65CLQTR-ND - Tape & Reel (TR) 264-TW092V65CLQCT-ND - Cut Tape (CT) 264-TW092V65CLQDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TW092V65C,LQ
Description	N-CH SIC MOSFET, 650 V, 0.092 OH
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 27A (Tc) 111W (Tc) Surface Mount 4-DFN-EP (8x8)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5V @ 600µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 28 nC @ 18 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) +25V, -10V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 873 pF @ 400 V
FET Type N-Channel	Power Dissipation (Max) 111W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature 175°C
Drain to Source Voltage (Vdss) 650 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 27A (Tc)	Supplier Device Package 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case 4-VSFN Exposed Pad
Rds On (Max) @ Id, Vgs 136mOhm @ 15A, 18V