Name: SSM6J212FE,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM6J212FELFTR-ND
Price: 1057 KRW
Availability: OutOfStock

SSM6J212FE,LF is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

Toshiba Semiconductor and Storage

In Stock: 0

Unit Price: ₩1,057.00000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SSM6J212FE,LF
DigiKey Part Number	SSM6J212FELFTR-ND - Tape & Reel (TR) SSM6J212FELFCT-ND - Cut Tape (CT) SSM6J212FELFDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	SSM6J212FE,LF
Description	MOSFET P-CH 20V 4A ES6
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 4A (Ta) 500mW (Ta) Surface Mount ES6
Datasheet	Datasheet
EDA/CAD Models	SSM6J212FE,LF Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	40.7mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14.1 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	970 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	ES6
Package / Case	SOT-563, SOT-666
Base Product Number	SSM6J212