Name: RN1106MFV,L3F
Brand: Toshiba Semiconductor and Storage
SKU: RN1106MFVL3FTR-ND
Price: 223 KRW
Availability: InStock

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RN1106MFV,L3F
DigiKey Part Number	RN1106MFVL3FTR-ND - Tape & Reel (TR) RN1106MFVL3FCT-ND - Cut Tape (CT) RN1106MFVL3FDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	RN1106MFV,L3F
Description	TRANS PREBIAS NPN 50V 0.1A VESM
Manufacturer Standard Lead Time	42 Weeks
Customer Reference
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Datasheet	Datasheet
EDA/CAD Models	RN1106MFV,L3F Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistors Included	R1 and R2
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM
Base Product Number	RN1106

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Cut Tape (CT) & Digi-Reel®

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Tape & Reel (TR)