Name: GT40RR21(STA1,E
Brand: Toshiba Semiconductor and Storage
SKU: 264-GT40RR21(STA1E-ND
Price: 8913 KRW
Availability: InStock

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GT40RR21(STA1,E
DigiKey Part Number	264-GT40RR21(STA1E-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	GT40RR21(STA1,E
Description	IGBT 1200V 40A TO-3P
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors IGBTs Single IGBTs	Switching Energy -, 540µJ (off)
Manufacturer Toshiba Semiconductor and Storage	Input Type Standard
Packaging Tube	Test Condition 280V, 40A, 10Ohm, 20V
Part Status Active	Reverse Recovery Time (trr) 600 ns
Voltage - Collector Emitter Breakdown (Max) 1200 V	Operating Temperature 175°C (TJ)
Current - Collector (Ic) (Max) 40 A	Mounting Type Through Hole
Current - Collector Pulsed (Icm) 200 A	Package / Case TO-3P-3, SC-65-3
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 40A	Supplier Device Package TO-3P(N)
Power - Max 230 W	Base Product Number GT40RR21

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GT40RR21(STA1,E