Name: SCT025W120G3AG
Brand: STMicroelectronics
SKU: 497-SCT025W120G3AG-ND
Price: 29582 KRW
Availability: InStock

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SCT025W120G3AG
DigiKey Part Number	497-SCT025W120G3AG-ND
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCT025W120G3AG
Description	AUTOMOTIVE-GRADE SILICON CARBIDE
Manufacturer Standard Lead Time	21 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 56A (Tc) 388W (Tc) Through Hole HiP247™
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 73 nC @ 18 V
Mfr STMicroelectronics	Vgs (Max) +18V, -5V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 800 V
Part Status Active	Power Dissipation (Max) 388W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 200°C (TJ)
Technology SiCFET (Silicon Carbide)	Grade Automotive
Drain to Source Voltage (Vdss) 1200 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 56A (Tc)	Mounting Type Through Hole
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Supplier Device Package HiP247™
Rds On (Max) @ Id, Vgs 37mOhm @ 25A, 18V	Package / Case TO-247-3
Vgs(th) (Max) @ Id 4.2V @ 5mA