Name: S2M0160120K
Brand: SMC Diode Solutions
SKU: 1655-S2M0160120K-ND
Price: 8364 KRW
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

S2M0160120K
DigiKey Part Number	1655-S2M0160120K-ND
Manufacturer	SMC Diode Solutions
Manufacturer Product Number	S2M0160120K
Description	MOSFET SILICON CARBIDE SIC 1200V
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 17A (Tc) 130W (Tc) Through Hole TO-247-4
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	SMC Diode Solutions
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	196mOhm @ 10A, 20V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	26.5 nC @ 20 V
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	513 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4