Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92
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2N5551

DigiKey Part Number
5399-2N5551-ND
Manufacturer
Manufacturer Product Number
2N5551
Description
160V 625MW 80@10MA,5V 600MA NPN
Manufacturer Standard Lead Time
4 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92
Datasheet
 Datasheet
Product Attributes
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Category
Current - Collector Cutoff (Max)
50nA (ICBO)
Mfr
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Packaging
Bag
Power - Max
625 mW
Part Status
Active
Frequency - Transition
300MHz
Transistor Type
Operating Temperature
150°C (TJ)
Current - Collector (Ic) (Max)
600 mA
Mounting Type
Through Hole
Voltage - Collector Emitter Breakdown (Max)
160 V
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Supplier Device Package
TO-92
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 5,080
Check for Additional Incoming Stock
All prices are in KRW
Bag
QuantityUnit PriceExt Price
1₩168.00000₩168
10₩99.40000₩994
100₩60.85000₩6,085
500₩43.72400₩21,862
1,000₩38.17400₩38,174
2,000₩33.45000₩66,900
5,000₩28.31940₩141,597
10,000₩25.13350₩251,335
50,000₩19.53104₩976,552
Manufacturers Standard Package