Name: GP3T016A120H
Brand: SemiQ
SKU: 1560-GP3T016A120H-ND
Price: 21496 KRW
Availability: InStock

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GP3T016A120H
DigiKey Part Number	1560-GP3T016A120H-ND
Manufacturer	SemiQ
Manufacturer Product Number	GP3T016A120H
Description	GEN3 1200V, 16M SIC MOSFET, TO-2
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 132A (Tc) 484W (Tc) Through Hole TO-247-4
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 23mOhm @ 50A, 18V
Mfr SemiQ	Vgs(th) (Max) @ Id 4V @ 20mA
Series QSiC™	Gate Charge (Qg) (Max) @ Vgs 260 nC @ 18 V
Packaging Tube	Vgs (Max) +22V, -8V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 6779 pF @ 1000 V
FET Type N-Channel	Power Dissipation (Max) 484W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 132A (Tc)	Supplier Device Package TO-247-4
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-4