Name: TP65H150G4LSGBE-TR
Brand: Renesas Electronics Corporation
SKU: 1707-TP65H150G4LSGBE-TR-ND
Price: 6436 KRW
Availability: InStock

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N-Channel 650 V 14.2A (Tc) 62.5W (Tc) Surface Mount 8-PQFN (8x8)

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TP65H150G4LSGBE-TR
DigiKey Part Number	1707-TP65H150G4LSGBE-TR-ND - Tape & Reel (TR) 1707-TP65H150G4LSGBE-TRCT-ND - Cut Tape (CT) 1707-TP65H150G4LSGBE-TRDKR-ND - Digi-Reel®
Manufacturer	Renesas Electronics Corporation
Manufacturer Product Number	TP65H150G4LSGBE-TR
Description	650V, 150MOHM GAN FET IN 8X8 PQF
Manufacturer Standard Lead Time	5 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 14.2A (Tc) 62.5W (Tc) Surface Mount 8-PQFN (8x8)
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 6V
Mfr Renesas Electronics Corporation	Vgs(th) (Max) @ Id 2V @ 500µA
Series SuperGaN®	Gate Charge (Qg) (Max) @ Vgs 14 nC @ 6 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±20V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 400 V
FET Type N-Channel	Power Dissipation (Max) 62.5W (Tc)
Technology GaNFET (Gallium Nitride)	Operating Temperature -55°C ~ 150°C
Drain to Source Voltage (Vdss) 650 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 14.2A (Tc)	Supplier Device Package 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On) 6V	Package / Case 8-VDFN Exposed Pad