


Category | Vgs(th) (Max) @ Id 5V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 10 V |
Series | Vgs (Max) ±30V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V |
Part Status Active | Power Dissipation (Max) 55W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Surface Mount |
Drain to Source Voltage (Vdss) 650 V | Supplier Device Package TO-252AA |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 2.3Ohm @ 1A, 10V |
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| FDD5N60NZTM | onsemi | 35,873 | FDD5N60NZTMCT-ND | ₩2,905.00000 | Similar |
| IPD80R2K0P7ATMA1 | Infineon Technologies | 624 | IPD80R2K0P7ATMA1CT-ND | ₩2,156.00000 | Similar |
| STD4N62K3 | STMicroelectronics | 3,318 | 497-STD4N62K3CT-ND | ₩4,327.00000 | Similar |
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ₩5,167.00000 | ₩5,167 |
| 70 | ₩2,455.02857 | ₩171,852 |
| 140 | ₩2,223.64286 | ₩311,310 |
| 560 | ₩1,865.16250 | ₩1,044,491 |
| 1,050 | ₩1,739.30857 | ₩1,826,274 |
| 2,030 | ₩1,626.94433 | ₩3,302,697 |
| 5,040 | ₩1,505.10357 | ₩7,585,722 |