N-Channel 650 V 4A (Tc) 32W (Tc) Through Hole TO-220
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IXTP8N65X2M

DigiKey Part Number
IXTP8N65X2M-ND
Manufacturer
Manufacturer Product Number
IXTP8N65X2M
Description
MOSFET N-CH 650V 4A TO220
Manufacturer Standard Lead Time
21 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 4A (Tc) 32W (Tc) Through Hole TO-220
Datasheet
 Datasheet
Product Attributes
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Category
Vgs(th) (Max) @ Id
5V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Series
Vgs (Max)
±30V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
Part Status
Active
Power Dissipation (Max)
32W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-220
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
550mOhm @ 4A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (3)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
FCP600N60Zonsemi143FCP600N60ZOS-ND₩4,770.00000Similar
SPP07N60C3XKSA1Infineon Technologies945SPP07N60C3XKSA1-ND₩4,709.00000Similar
STP10NM60NDSTMicroelectronics626497-12276-ND₩4,204.00000Similar
In-Stock: 11
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All prices are in KRW
Tube
QuantityUnit PriceExt Price
1₩7,354.00000₩7,354
50₩3,778.88000₩188,944
100₩3,433.68000₩343,368
500₩2,828.95200₩1,414,476
1,000₩2,634.78000₩2,634,780
2,000₩2,471.60350₩4,943,207
5,000₩2,421.42960₩12,107,148
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.