N-Channel 200 V 120A (Tc) 417W (Tc) Through Hole TO-220 (IXTP)
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N-Channel 200 V 120A (Tc) 417W (Tc) Through Hole TO-220 (IXTP)
TO-220

IXTP120N20X4

DigiKey Part Number
238-IXTP120N20X4-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTP120N20X4
Description
MOSFET
Manufacturer Standard Lead Time
41 Weeks
Customer Reference
Detailed Description
N-Channel 200 V 120A (Tc) 417W (Tc) Through Hole TO-220 (IXTP)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220 (IXTP)
Package / Case
TO-220-3
Base Product Number
IXTP120
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In-Stock: 492
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Quantity
All prices are in KRW
Tube
QuantityUnit PriceExt Price
1₩15,676.00000₩15,676
50₩8,655.12000₩432,756
100₩7,978.83000₩797,883
500₩6,795.33000₩3,397,665
1,000₩6,631.65400₩6,631,654
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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