N-Channel 800 V 11A (Tc) 156W (Tc) Through Hole PG-TO220-3-1
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SPP11N80C3XKSA1

DigiKey Part Number
SPP11N80C3XKSA1-ND
Manufacturer
Manufacturer Product Number
SPP11N80C3XKSA1
Description
MOSFET N-CH 800V 11A TO220-3
Customer Reference
Detailed Description
N-Channel 800 V 11A (Tc) 156W (Tc) Through Hole PG-TO220-3-1
Datasheet
 Datasheet
EDA/CAD Models
SPP11N80C3XKSA1 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
3.9V @ 680µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Series
Vgs (Max)
±20V
Packaging
Tube
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 100 V
Part Status
Not For New Designs
Power Dissipation (Max)
156W (Tc)
FET Type
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
800 V
Supplier Device Package
PG-TO220-3-1
Current - Continuous Drain (Id) @ 25°C
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
Rds On (Max) @ Id, Vgs
450mOhm @ 7.1A, 10V
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (5)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
IRF830APBFVishay Siliconix1,718IRF830APBF-ND₩4,739.00000Similar
IRFBC30APBFVishay Siliconix732IRFBC30APBF-ND₩6,115.00000Similar
STP10N60M2STMicroelectronics400497-13970-5-ND₩3,302.00000Similar
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In-Stock: 3,043
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Not recommended for new design, minimums may apply View Substitutes
All prices are in KRW
Tube
QuantityUnit PriceExt Price
1₩5,901.00000₩5,901
50₩2,978.40000₩148,920
100₩2,694.97000₩269,497
500₩2,198.32200₩1,099,161
1,000₩2,038.79200₩2,038,792
2,000₩1,904.70150₩3,809,403
5,000₩1,800.16200₩9,000,810
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.