Name: IRF8010PBF
Brand: Infineon Technologies
SKU: IRF8010PBF-ND
Price: 5604 KRW
Availability: InStock

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IRF8010PBF
DigiKey Part Number	IRF8010PBF-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRF8010PBF
Description	MOSFET N-CH 100V 80A TO220AB
Manufacturer Standard Lead Time	35 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 80A (Tc) 260W (Tc) Through Hole TO-220AB
Datasheet	Datasheet
EDA/CAD Models	IRF8010PBF Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Series HEXFET®	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 3830 pF @ 25 V
Part Status Active	Power Dissipation (Max) 260W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package TO-220AB
Current - Continuous Drain (Id) @ 25°C 80A (Tc)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IRF8010
Rds On (Max) @ Id, Vgs 15mOhm @ 45A, 10V

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Substitutes (8)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
IPP180N10N3GXKSA1	Infineon Technologies	738	448-IPP180N10N3GXKSA1-ND	₩3.32000	Similar
IRFB4410ZPBF	Infineon Technologies	2,424	448-IRFB4410ZPBF-ND	₩3.87000	Similar
CSD19534KCS	Texas Instruments	1,011	296-38676-5-ND	₩3.17000	Similar
DMNH10H028SCT	Diodes Incorporated	68	DMNH10H028SCTDI-5-ND	₩3.23000	Similar
IXTP80N10T	IXYS	9,899	IXTP80N10T-ND	₩7.61000	Similar

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