Name: IQEH80NE2LM7UCGSCATMA1
Brand: Infineon Technologies
SKU: 448-IQEH80NE2LM7UCGSCATMA1TR-ND
Price: 4189 KRW
Availability: InStock

New Product

N-Channel 25 V 43A (Ta), 282A (Tc) 2.5W (Ta), 107W (Tc) Surface Mount PG-WHTFN-9-1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IQEH80NE2LM7UCGSCATMA1
DigiKey Part Number	448-IQEH80NE2LM7UCGSCATMA1TR-ND - Tape & Reel (TR) 448-IQEH80NE2LM7UCGSCATMA1CT-ND - Cut Tape (CT) 448-IQEH80NE2LM7UCGSCATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IQEH80NE2LM7UCGSCATMA1
Description	TRENCH <= 40V
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 25 V 43A (Ta), 282A (Tc) 2.5W (Ta), 107W (Tc) Surface Mount PG-WHTFN-9-1
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 7
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	43A (Ta), 282A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 279µA
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-WHTFN-9-1
Package / Case	9-PowerWDFN