Name: IPI60R125CPXKSA1
Brand: Infineon Technologies
SKU: IPI60R125CPXKSA1-ND
Price: 11344 KRW
Availability: InStock

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IPI60R125CPXKSA1
DigiKey Part Number	IPI60R125CPXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPI60R125CPXKSA1
Description	MOSFET N-CH 650V 25A TO262-3
Customer Reference
Detailed Description	N-Channel 650 V 25A (Tc) 208W (Tc) Through Hole PG-TO262-3
Datasheet	Datasheet
EDA/CAD Models	IPI60R125CPXKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.5V @ 1.1mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Series CoolMOS™	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V
Part Status Not For New Designs	Power Dissipation (Max) 208W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 25A (Tc)	Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPI60R125
Rds On (Max) @ Id, Vgs 125mOhm @ 16A, 10V

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
STI33N60M2	STMicroelectronics	0	497-15016-5-ND	₩2,482.19000	Similar
XP60SL115DR	YAGEO XSEMI	988	5048-XP60SL115DR-ND	₩6,818.00000	Similar

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