IPI100N10S305AKSA1 Infineon Technologies | Single FETs, MOSFETs

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IPI100N10S305AKSA1
DigiKey Part Number	IPI100N10S305AKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPI100N10S305AKSA1
Description	MOSFET N-CH 100V 100A TO262-3
Customer Reference
Detailed Description	N-Channel 100 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	176 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11570 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number	IPI100N