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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPI086N10N3GXKSA1 | |
|---|---|
DigiKey Part Number | IPI086N10N3GXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IPI086N10N3GXKSA1 |
Description | MOSFET N-CH 100V 80A TO262-3 |
Manufacturer Standard Lead Time | 17 Weeks |
Customer Reference | |
Detailed Description | N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3 |
Datasheet | Datasheet |
EDA/CAD Models | IPI086N10N3GXKSA1 Models |
Product Attributes
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Category | Vgs(th) (Max) @ Id 3.5V @ 75µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V |
Series | Vgs (Max) ±20V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 50 V |
Part Status Active | Power Dissipation (Max) 125W (Tc) |
FET Type | Operating Temperature -55°C ~ 175°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 100 V | Supplier Device Package PG-TO262-3 |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 8.6mOhm @ 73A, 10V |
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In-Stock: 28
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Quantity
All prices are in KRW
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ₩3,700.00000 | ₩3,700 |
| 50 | ₩1,800.92000 | ₩90,046 |
| 100 | ₩1,615.64000 | ₩161,564 |
| 500 | ₩1,290.24600 | ₩645,123 |
| 1,000 | ₩1,185.64600 | ₩1,185,646 |
| 2,000 | ₩1,097.69350 | ₩2,195,387 |
| 5,000 | ₩1,002.56260 | ₩5,012,813 |
| 10,000 | ₩952.82460 | ₩9,528,246 |
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