Name: IPD60N10S4L12ATMA1
Brand: Infineon Technologies
SKU: IPD60N10S4L12ATMA1TR-ND
Price: 3166 KRW
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD60N10S4L12ATMA1
DigiKey Part Number	IPD60N10S4L12ATMA1TR-ND - Tape & Reel (TR) IPD60N10S4L12ATMA1CT-ND - Cut Tape (CT) IPD60N10S4L12ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD60N10S4L12ATMA1
Description	MOSFET N-CH 100V 60A TO252-3
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313
Datasheet	Datasheet
EDA/CAD Models	IPD60N10S4L12ATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	HEXFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3170 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	IPD60N10