Name: IPB35N10S3L26ATMA1
Brand: Infineon Technologies
SKU: 448-IPB35N10S3L26ATMA1TR-ND
Price: 4403 KRW
Availability: InStock

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IPB35N10S3L26ATMA1
DigiKey Part Number	448-IPB35N10S3L26ATMA1TR-ND - Tape & Reel (TR) 448-IPB35N10S3L26ATMA1CT-ND - Cut Tape (CT) 448-IPB35N10S3L26ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB35N10S3L26ATMA1
Description	MOSFET N-CH 100V 35A D2PAK
Customer Reference
Detailed Description	N-Channel 100 V 35A (Tc) 71W (Tc) Surface Mount PG-TO263-3
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mfr Infineon Technologies	Vgs (Max) ±20V
Series OptiMOS™	Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 71W (Tc)
Part Status Not For New Designs	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 100 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 35A (Tc)	Supplier Device Package PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs 26.3mOhm @ 35A, 10V	Base Product Number IPB35N10
Vgs(th) (Max) @ Id 2.4V @ 39µA