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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IMZA65R057M1HXKSA1 | |
|---|---|
DigiKey Part Number | 448-IMZA65R057M1HXKSA1-ND |
Manufacturer | |
Manufacturer Product Number | IMZA65R057M1HXKSA1 |
Description | SILICON CARBIDE MOSFET, PG-TO247 |
Customer Reference | |
Detailed Description | N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-4-3 |
Datasheet | Datasheet |
EDA/CAD Models | IMZA65R057M1HXKSA1 Models |
Product Attributes
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Category | Rds On (Max) @ Id, Vgs 74mOhm @ 16.7A, 18V |
Mfr | Vgs(th) (Max) @ Id 5.7V @ 5mA |
Series | Gate Charge (Qg) (Max) @ Vgs 28 nC @ 18 V |
Packaging Tube | Vgs (Max) +20V, -2V |
Part Status Not For New Designs | Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 400 V |
FET Type | Power Dissipation (Max) 133W (Tc) |
Technology | Operating Temperature -55°C ~ 175°C (TJ) |
Drain to Source Voltage (Vdss) 650 V | Mounting Type Through Hole |
Current - Continuous Drain (Id) @ 25°C | Supplier Device Package PG-TO247-4-3 |
Drive Voltage (Max Rds On, Min Rds On) 18V | Package / Case |
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In-Stock: 15
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Quantity
All prices are in KRW
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | ₩16,922.00000 | ₩16,922 |
| 30 | ₩9,889.20000 | ₩296,676 |
| 120 | ₩8,345.45000 | ₩1,001,454 |
| 510 | ₩7,214.60588 | ₩3,679,449 |
| 1,020 | ₩6,802.21667 | ₩6,938,261 |
| 2,010 | ₩6,462.54229 | ₩12,989,710 |
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