Name: DMWSH120H43SM3
Brand: Diodes Incorporated
SKU: 31-DMWSH120H43SM3-ND
Price: 28665 KRW
Availability: InStock

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DMWSH120H43SM3
DigiKey Part Number	31-DMWSH120H43SM3-ND
Manufacturer	Diodes Incorporated
Manufacturer Product Number	DMWSH120H43SM3
Description	SICFET N-CH 1200V TO-247
Manufacturer Standard Lead Time	40 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 72.7A (Tc) 341W (Tc) Through Hole TO-247
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.6V @ 11.5mA
Mfr Diodes Incorporated	Gate Charge (Qg) (Max) @ Vgs 105 nC @ 15 V
Packaging Tube	Vgs (Max) +19V, -8V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 2187 pF @ 1000 V
FET Type N-Channel	Power Dissipation (Max) 341W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 72.7A (Tc)	Supplier Device Package TO-247
Drive Voltage (Max Rds On, Min Rds On) 15V	Package / Case TO-247-3
Rds On (Max) @ Id, Vgs 43mOhm @ 40A, 15V