Name: DMWSH120H28SM3Q
Brand: Diodes Incorporated
SKU: 31-DMWSH120H28SM3Q-ND
Price: 55648 KRW
Availability: InStock

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DMWSH120H28SM3Q
DigiKey Part Number	31-DMWSH120H28SM3Q-ND
Manufacturer	Diodes Incorporated
Manufacturer Product Number	DMWSH120H28SM3Q
Description	SICFET N-CH 1200V TO-247
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 97.4A (Tc) 405W (Tc) Through Hole TO-247
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 175 nC @ 15 V
Mfr Diodes Incorporated	Vgs (Max) +19V, -8V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 3905 pF @ 1000 V
Part Status Active	Power Dissipation (Max) 405W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Grade Automotive
Drain to Source Voltage (Vdss) 1200 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 97.4A (Tc)	Mounting Type Through Hole
Drive Voltage (Max Rds On, Min Rds On) 15V	Supplier Device Package TO-247
Rds On (Max) @ Id, Vgs 28.5mOhm @ 50A, 15V	Package / Case TO-247-3
Vgs(th) (Max) @ Id 3.6V @ 17.7mA