EPC9017: 20A, 0 ~ 100V, Half Bridge

The EPC9017 development board features the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 20 A maximum output current in a half bridge configuration with onboard gate drives. The purpose of this development board is to simplify the evaluation process of the EPC2001 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9017 development board is 2” x 1.5” and features three EPC2001 eGaN FETs in a half bridge configuration using the Texas Instruments LM5113 gate driver. The half bridge configuration contains a single top side device and two parallel bottom devices and is recommended for high current, lower duty cycle applications.The board contains all critical components and the printed circuit board (PCB) layout is designed for optimal switching performance.

There are also various probe points to facilitate simple waveform measurement and evaluate eGaN FET efficiency. A complete block diagram of the circuit is given in Figure 1.