Capacitance is directly related to surface area of the Tantalum powder and inversely related to the thickness of the dielectric. A certain dielectric thickness is required to maintain quality. The dielectric growth rate of Tantalum Pentoxide is roughly 20 Angstrom per formation voltage. Due to the diffusion of Tantalum and oxygen, the Tantalum Pentoxide dielectric will grow inwards roughly 1/3 of total dielectric thickness and outwards roughly 2/3 of total dielectric thickness from the original surface of the Tantalum particle.