SICU02120G4J-TP 1200 V 2 A Silicon Carbide (SiC) Schottky Barrier Rectifier

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            SICU02120G4J-TP 1200 V 2 A Silicon Carbide (SiC) Schottky Barrier Rectifier
                    The MCC SICU02120G4J-TP 1200 V  2 A SiC Schottky diode is ideal for high-efficiency, high-speed, and high-temperature power conversions
    

The Micro Commercial Components SICU02120G4J-TP high-voltage 2 A SiC Schottky Barrier rectifier comes in the industry-standard DPAK package. Leveraging the superior material properties of SiC, this diode eliminates reverse recovery charge (Q_rr), a major source of switching loss in conventional silicon diodes. It is engineered for high-efficiency performance in high-voltage, high-frequency power conversion systems, offering superior reliability, higher temperature operation, and reduced EMI.

Features

Zero reverse recovery current eliminates reverse recovery losses, enabling higher efficiency
Positive temperature coefficient designed with forward voltage (V_f) increases with temperature, promoting natural thermal stability and easier parallel operation for higher current capabilities
Offers ultra-fast switching capabilities, making it ideal for high-frequency circuits

Capable of operating at higher junction temperatures (T_j max = +175°C) increases system ruggedness and reducing cooling requirements
The DPAK package offers a common footprint for easy design-in and provides good power handling capability with its exposed thermal pad
RoHS and halogen-free aligning with global environmental standards and green manufacturing initiatives

Applications