SiC Schottky Diode Series 1200 V Automotive-Grade SiC Rectifiers in Various Package Sizes

The Micro Commercial Components Gen4 1200 V silicon carbide (SiC) Schottky diode series is a family of automotive-qualified SiC Schottky barrier diodes engineered to deliver superior efficiency, negligible reverse recovery, and stable high-temperature performance for demanding power systems. Available in DPAK and TO-220AC packages, this series supports both compact surface-mount designs and high-power through-hole applications requiring strong thermal dissipation and electrical robustness.

Utilizing advanced junction barrier Schottky (JBS) technology, these devices combine the fast switching characteristics of Schottky diodes with improved leakage control and surge robustness. The series provides forward voltage as low as 1.38 V, leakage current down to 0.1 µA, capacitive charge as low as 10.2 nC, and operation up to +175°C junction temperature, enabling designers to reduce switching losses, increase efficiency, and improve power density in power factor correction stages, industrial power supplies, solar inverters, EV charging systems, and motor drives.