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Product Index > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
KRW
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SCT3160KLGC11 Datasheet SCT3160KLGC11 - Rohm Semiconductor SCT3160KLGC11-ND SCT3160KLGC11 Rohm Semiconductor SICFET N-CH 1200V 17A TO247N 5,186 - Immediate Available: 5,186 ₩11,106.00000 1 Minimum: 1 Tube
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Active N-Channel SiCFET (Silicon Carbide) 1200V 17A (Tc) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42nC @ 18V +22V, -4V 398pF @ 800V
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103W (Tc) 175°C (TJ) Through Hole TO-247N TO-247-3
SCT3080ALGC11 Datasheet SCT3080ALGC11 - Rohm Semiconductor SCT3080ALGC11-ND SCT3080ALGC11 Rohm Semiconductor SICFET N-CH 650V 30A TO247N 310 - Immediate Available: 310 ₩13,167.00000 1 Minimum: 1 Tube
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Active N-Channel SiCFET (Silicon Carbide) 650V 30A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48nC @ 18V +22V, -4V 571pF @ 500V
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134W (Tc) 175°C (TJ) Through Hole TO-247N TO-247-3
SCT3080KLGC11 Datasheet SCT3080KLGC11 - Rohm Semiconductor SCT3080KLGC11-ND SCT3080KLGC11 Rohm Semiconductor SICFET N-CH 1200V 31A TO247N 1,853 - Immediate Available: 1,853 ₩24,309.00000 1 Minimum: 1 Tube
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Active N-Channel SiCFET (Silicon Carbide) 1200V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60nC @ 18V +22V, -4V 785pF @ 800V
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165W (Tc) 175°C (TJ) Through Hole TO-247N TO-247-3
SCT2080KEC Datasheet SCT2080KEC - Rohm Semiconductor SCT2080KEC-ND SCT2080KEC Rohm Semiconductor SICFET N-CH 1200V 40A TO247 799 - Immediate Available: 799 ₩30,092.00000
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Tube
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Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V +22V, -6V 2080pF @ 800V
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262W (Tc) 175°C (TJ) Through Hole TO-247 TO-247-3
SCT3030ALGC11 Datasheet SCT3030ALGC11 - Rohm Semiconductor SCT3030ALGC11-ND SCT3030ALGC11 Rohm Semiconductor SICFET N-CH 650V 70A TO247N 3,480 - Immediate Available: 3,480 ₩32,941.00000 1 Minimum: 1 Tube
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Active N-Channel SiCFET (Silicon Carbide) 650V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104nC @ 18V +22V, -4V 1526pF @ 500V
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262W (Tc) 175°C (TJ) Through Hole TO-247N TO-247-3
SCT3030ARC14 Datasheet SCT3030ARC14 - Rohm Semiconductor 846-SCT3030ARC14-ND SCT3030ARC14 Rohm Semiconductor SICFET N-CH 650V 70A TO247-4L 424 - Immediate Available: 424 ₩54,110.00000 1 Minimum: 1 Tube
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Active N-Channel SiCFET (Silicon Carbide) 650V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104nC @ 18V +22V, -4V 1526pF @ 500V
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262W 175°C (TJ) Through Hole TO-247-4L TO-247-4
SCT3022ALGC11 Datasheet SCT3022ALGC11 - Rohm Semiconductor SCT3022ALGC11-ND SCT3022ALGC11 Rohm Semiconductor SICFET N-CH 650V 93A TO247N 187 - Immediate Available: 187 ₩56,098.00000 1 Minimum: 1 Tube
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Active N-Channel SiCFET (Silicon Carbide) 650V 93A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 133nC @ 18V +22V, -4V 2208pF @ 500V
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339W (Tc) 175°C (TJ) Through Hole TO-247N TO-247-3
SCT3040KRC14 Datasheet SCT3040KRC14 - Rohm Semiconductor 846-SCT3040KRC14-ND SCT3040KRC14 Rohm Semiconductor SICFET N-CH 1200V 55A TO247-4L 207 - Immediate Available: 207 ₩57,165.00000 1 Minimum: 1 Tube
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Active N-Channel SiCFET (Silicon Carbide) 1200V 55A (Tc) 18V 52mOhm @ 20A, 18V 5.6V @ 10mA 107nC @ 18V +22V, -4V 1337pF @ 800V
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262W 175°C (TJ) Through Hole TO-247-4L TO-247-4
SCT3022KLGC11 Datasheet SCT3022KLGC11 - Rohm Semiconductor SCT3022KLGC11-ND SCT3022KLGC11 Rohm Semiconductor SICFET N-CH 1200V 95A TO247N 365 - Immediate Available: 365 ₩60,111.00000 1 Minimum: 1 Tube
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Active N-Channel SiCFET (Silicon Carbide) 1200V 95A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 178nC @ 10V +22V, -4V 2879pF @ 800V
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427W 175°C (TJ) Through Hole TO-247N TO-247-3
SCT3030KLGC11 Datasheet SCT3030KLGC11 - Rohm Semiconductor SCT3030KLGC11-ND SCT3030KLGC11 Rohm Semiconductor SICFET N-CH 1200V 72A TO247N 666 - Immediate Available: 666 ₩85,826.00000 1 Minimum: 1 Tube
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Active N-Channel SiCFET (Silicon Carbide) 1200V 72A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 131nC @ 18V +22V, -4V 2222pF @ 800V
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339W (Tc) 175°C (TJ) Through Hole TO-247N TO-247-3
SCT3017ALHRC11 Datasheet SCT3017ALHRC11 - Rohm Semiconductor SCT3017ALHRC11-ND SCT3017ALHRC11 Rohm Semiconductor SICFET N-CH 650V 118A TO247N 636 - Immediate Available: 636 ₩138,918.00000 1 Minimum: 1 Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650V 118A (Tc) 18V 22.1mOhm @ 47A, 18V 5.6V @ 23.5mA 172nC @ 18V +22V, -4V 2884pF @ 500V
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427W 175°C (TJ) Through Hole TO-247N TO-247-3
RU1J002YNTCL Datasheet RU1J002YNTCL - Rohm Semiconductor RU1J002YNTCLTR-ND RU1J002YNTCL Rohm Semiconductor MOSFET N-CH 50V 200MA UMT3F 96,000 - Immediate Available: 96,000 ₩46.62533 3,000 Minimum: 3,000 Tape & Reel (TR)
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 50V 200mA (Ta) 0.9V, 4.5V 2.2Ohm @ 200mA, 4.5V 800mV @ 1mA
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±8V 26pF @ 10V
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150mW (Ta) 150°C (TJ) Surface Mount UMT3F SC-85
RU1J002YNTCL Datasheet RU1J002YNTCL - Rohm Semiconductor RU1J002YNTCLCT-ND RU1J002YNTCL Rohm Semiconductor MOSFET N-CH 50V 200MA UMT3F 100,394 - Immediate Available: 100,394 ₩267.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 50V 200mA (Ta) 0.9V, 4.5V 2.2Ohm @ 200mA, 4.5V 800mV @ 1mA
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±8V 26pF @ 10V
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150mW (Ta) 150°C (TJ) Surface Mount UMT3F SC-85
RU1J002YNTCL Datasheet RU1J002YNTCL - Rohm Semiconductor RU1J002YNTCLDKR-ND RU1J002YNTCL Rohm Semiconductor MOSFET N-CH 50V 200MA UMT3F 100,394 - Immediate Available: 100,394 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 50V 200mA (Ta) 0.9V, 4.5V 2.2Ohm @ 200mA, 4.5V 800mV @ 1mA
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±8V 26pF @ 10V
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150mW (Ta) 150°C (TJ) Surface Mount UMT3F SC-85
RUM002N02T2L Datasheet RUM002N02T2L - Rohm Semiconductor RUM002N02T2LTR-ND RUM002N02T2L Rohm Semiconductor MOSFET N-CH 20V 200MA VMT3 64,000 - Immediate Available: 64,000 ₩74.68438 8,000 Minimum: 8,000 Tape & Reel (TR)
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 20V 200mA (Ta) 1.2V, 2.5V 1.2Ohm @ 200mA, 2.5V 1V @ 1mA
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±8V 25pF @ 10V
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150mW (Ta) 150°C (TJ) Surface Mount VMT3 SOT-723
RUM002N02T2L Datasheet RUM002N02T2L - Rohm Semiconductor RUM002N02T2LCT-ND RUM002N02T2L Rohm Semiconductor MOSFET N-CH 20V 200MA VMT3 71,232 - Immediate Available: 71,232 ₩485.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 20V 200mA (Ta) 1.2V, 2.5V 1.2Ohm @ 200mA, 2.5V 1V @ 1mA
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±8V 25pF @ 10V
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150mW (Ta) 150°C (TJ) Surface Mount VMT3 SOT-723
RUM002N02T2L Datasheet RUM002N02T2L - Rohm Semiconductor RUM002N02T2LDKR-ND RUM002N02T2L Rohm Semiconductor MOSFET N-CH 20V 200MA VMT3 71,232 - Immediate Available: 71,232 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 20V 200mA (Ta) 1.2V, 2.5V 1.2Ohm @ 200mA, 2.5V 1V @ 1mA
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±8V 25pF @ 10V
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150mW (Ta) 150°C (TJ) Surface Mount VMT3 SOT-723
RUM002N05T2L Datasheet RUM002N05T2L - Rohm Semiconductor RUM002N05T2LTR-ND RUM002N05T2L Rohm Semiconductor MOSFET N-CH 50V 200MA VMT3 8,000 - Immediate Available: 8,000 ₩76.81813 8,000 Minimum: 8,000 Tape & Reel (TR)
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 50V 200mA (Ta) 1.2V, 4.5V 2.2Ohm @ 200mA, 4.5V 1V @ 1mA
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±8V 25pF @ 10V
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150mW (Ta) 150°C (TJ) Surface Mount VMT3 SOT-723
RUM002N05T2L Datasheet RUM002N05T2L - Rohm Semiconductor RUM002N05T2LCT-ND RUM002N05T2L Rohm Semiconductor MOSFET N-CH 50V 200MA VMT3 14,653 - Immediate Available: 14,653 ₩461.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 50V 200mA (Ta) 1.2V, 4.5V 2.2Ohm @ 200mA, 4.5V 1V @ 1mA
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±8V 25pF @ 10V
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150mW (Ta) 150°C (TJ) Surface Mount VMT3 SOT-723
RUM002N05T2L Datasheet RUM002N05T2L - Rohm Semiconductor RUM002N05T2LDKR-ND RUM002N05T2L Rohm Semiconductor MOSFET N-CH 50V 200MA VMT3 14,653 - Immediate Available: 14,653 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
-
Active N-Channel MOSFET (Metal Oxide) 50V 200mA (Ta) 1.2V, 4.5V 2.2Ohm @ 200mA, 4.5V 1V @ 1mA
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±8V 25pF @ 10V
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150mW (Ta) 150°C (TJ) Surface Mount VMT3 SOT-723
RV2C010UNT2L Datasheet RV2C010UNT2L - Rohm Semiconductor RV2C010UNT2LTR-ND RV2C010UNT2L Rohm Semiconductor MOSFET N-CH 20V 1A DFN1006-3 24,000 - Immediate Available: 24,000 ₩79.21875 8,000 Minimum: 8,000 Tape & Reel (TR)
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 20V 1A (Ta) 1.2V, 4.5V 470mOhm @ 500mA, 4.5V 1V @ 1mA
-
±8V 40pF @ 10V
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400mW (Ta) 150°C (TJ) Surface Mount DFN1006-3 (VML1006) SC-101, SOT-883
RV2C010UNT2L Datasheet RV2C010UNT2L - Rohm Semiconductor RV2C010UNT2LCT-ND RV2C010UNT2L Rohm Semiconductor MOSFET N-CH 20V 1A DFN1006-3 30,354 - Immediate Available: 30,354 ₩473.00000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 20V 1A (Ta) 1.2V, 4.5V 470mOhm @ 500mA, 4.5V 1V @ 1mA
-
±8V 40pF @ 10V
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400mW (Ta) 150°C (TJ) Surface Mount DFN1006-3 (VML1006) SC-101, SOT-883
RV2C010UNT2L Datasheet RV2C010UNT2L - Rohm Semiconductor RV2C010UNT2LDKR-ND RV2C010UNT2L Rohm Semiconductor MOSFET N-CH 20V 1A DFN1006-3 30,354 - Immediate Available: 30,354 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
-
Active N-Channel MOSFET (Metal Oxide) 20V 1A (Ta) 1.2V, 4.5V 470mOhm @ 500mA, 4.5V 1V @ 1mA
-
±8V 40pF @ 10V
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400mW (Ta) 150°C (TJ) Surface Mount DFN1006-3 (VML1006) SC-101, SOT-883
2SK3019TL Datasheet 2SK3019TL - Rohm Semiconductor 2SK3019TLTR-ND 2SK3019TL Rohm Semiconductor MOSFET N-CH 30V 100MA EMT3 246,000 - Immediate Available: 246,000 ₩85.88700
-
Tape & Reel (TR)
Alternate Packaging
-
Not For New Designs N-Channel MOSFET (Metal Oxide) 30V 100mA (Ta) 2.5V, 4V 8Ohm @ 10mA, 4V 1.5V @ 100µA
-
±20V 13pF @ 5V
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150mW (Ta) 150°C (TJ) Surface Mount EMT3 SC-75, SOT-416
2SK3019TL Datasheet 2SK3019TL - Rohm Semiconductor 2SK3019TLCT-ND 2SK3019TL Rohm Semiconductor MOSFET N-CH 30V 100MA EMT3 246,429 - Immediate Available: 246,429 ₩485.00000
-
Cut Tape (CT)
Alternate Packaging
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Not For New Designs N-Channel MOSFET (Metal Oxide) 30V 100mA (Ta) 2.5V, 4V 8Ohm @ 10mA, 4V 1.5V @ 100µA
-
±20V 13pF @ 5V
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150mW (Ta) 150°C (TJ) Surface Mount EMT3 SC-75, SOT-416
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12:56:55 6-12-2021