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SI7119DN-T1-GE3 P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Price & Procurement
158,482 In Stock
Can ship immediately
 

Quantity
All prices are in KRW.
Price Break Unit Price Extended Price
1 1,237.00000 ₩1,237
10 1,102.90000 ₩11,029
25 1,046.20000 ₩26,155
100 784.66000 ₩78,466
500 665.09200 ₩332,546
1,000 541.78900 ₩541,789

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI7119DN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 156,000 - Immediate
  • Unit Price: ₩534.31600
  • Digi-Reel®  : SI7119DN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 158,482 - Immediate
  • Unit Price: Digi-Reel®

SI7119DN-T1-GE3

Datasheet
Digi-Key Part Number SI7119DN-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI7119DN-T1-GE3
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Description MOSFET P-CH 200V 3.8A 1212-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

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Documents & Media
Datasheets SI7119DN
Video File
HTML Datasheet SI7119DN
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 666pF @ 50V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Part Number SI7119
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI7119DN-T1-GE3CT