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STW13NK100Z N-Channel 1000V 13A (Tc) 350W (Tc) Through Hole TO-247-3
Price & Procurement
 

Quantity
All prices are in KRW.
Price Break Unit Price Extended Price
1 11,679.00000 ₩11,679
10 10,554.50000 ₩105,545
25 10,063.92000 ₩251,598
100 8,738.51000 ₩873,851
500 7,609.34400 ₩3,804,672

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number 497-3556-5-ND
Copy   497-3556-5-ND
Quantity Available 1,819
Can ship immediately
Manufacturer

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Manufacturer Part Number

STW13NK100Z

Copy   STW13NK100Z
Description MOSFET N-CH 1KV 13A TO-247
Copy   MOSFET N-CH 1KV 13A TO-247
Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 1000V 13A (Tc) 350W (Tc) Through Hole TO-247-3

Copy   N-Channel 1000V 13A (Tc) 350W (Tc) Through Hole TO-247-3
Documents & Media
Datasheets STW13NK100Z
Other Related Documents STW13NK100Z View All Specifications
Product Training Modules STMicroelectronics ST MOSFETs
Simulation Models STW13NK100Z Spice Model
EDA / CAD Models ? Download from Ultra Librarian
Product Attributes Select All
Categories
Manufacturer STMicroelectronics
Series SuperMESH™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 266nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
FET Feature -
Power Dissipation (Max) 350W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Part Number STW13N
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 30
Other Names 497-3556-5

07:45:24 8-19-2019